SK hynix is accelerating its transition to the sixth-generation 10nm-class (1c) DRAM process. The company expects this node to become its primary DRAM technology by the first quarter of 2027.
The 1c DRAM process will serve as the foundation for next-generation HBM4E memory. This technology is essential for future high-performance AI applications.
Production capacity for 1c DRAM is projected to reach 34% of total output by the fourth quarter of 2026.
SK hynix shares surged 8.26% in Asian trading on September 7. The market movement signals strong investor confidence in the company's advanced process technology and AI sector leadership.