Navitas Semiconductor introduced the UHV‑TO‑247‑4‑ISO isolated through-hole package for its GeneSiC silicon carbide (SiC) MOSFETs. This new package supports high-voltage applications ranging from 1,200V to 3,300V.
The hardware features integrated isolation exceeding 6,000V to simplify system design. This architecture improves thermal performance and power density for demanding industrial environments.
Navitas announced the launch at the PCIM Europe 2026 conference in Germany, where it is showcasing GaN and SiC technologies. The new package targets efficiency gains in AI data centers, energy grids, and industrial power systems.