Kioxia started sample shipments of its 9th-generation BiCS FLASH™ 3D flash memory. The new 1-terabit (Tb) Triple-Level Cell (TLC) devices target applications needing high performance. These applications include AI-enabled PCs and smartphones, requiring low- to mid-level storage capacities.
The new memory leverages existing technologies. These include a 230-layer stacking process and CMOS directly Bonded to Array (CBA). It achieves a NAND interface speed of 4.8Gb/s. This speed represents a 33% improvement over Kioxia's 8th-generation devices. It also matches the performance of its upcoming 10th-generation technology. Kioxia uses this dual-axis strategy to offer high performance with efficient investment. The strategy also supports developing next-generation high-capacity chips.