Samsung Electronics will dedicate its second factory in Taylor, Texas, to producing high-bandwidth memory (HBM) base dies for AMD and Nvidia. The fab will use an advanced 2-nanometer process, and its entire output has reportedly been secured before construction formally begins this month.
A significant share of production is allocated to AMD, reflecting surging demand for HBM, a key component in AI accelerators. The base die is the logic layer that controls the stack of memory chips.
Mass production at the facility is scheduled to begin in 2030. The Texas-made base dies will be combined with DRAM core dies manufactured in South Korea to create finished HBM products, strengthening the U.S. domestic supply chain for essential AI hardware.